Application of reflectance studies to layered samples: SiOx on InSb
Identifieur interne : 026502 ( Main/Repository ); précédent : 026501; suivant : 026503Application of reflectance studies to layered samples: SiOx on InSb
Auteurs : RBID : Pascal:89-0058024Descripteurs français
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- Wicri :
- concept : Composé minéral.
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Pascal:89-0058024Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Application of reflectance studies to layered samples: SiOx on InSb</title>
<author><name sortKey="Remond, G" uniqKey="Remond G">G. Remond</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Bureau rech. géologiques minières</s1>
<s2>Orléans 45060</s2>
<s3>FRA</s3>
<sZ>A11011000</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Holloway, P H" uniqKey="Holloway P">P. H. Holloway</name>
</author>
<author><name sortKey="Caye, R" uniqKey="Caye R">R. Caye</name>
</author>
<author><name sortKey="Ruzakowski, P" uniqKey="Ruzakowski P">P. Ruzakowski</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">89-0058024</idno>
<date when="1988">1988</date>
<idno type="stanalyst">PASCAL 89-0058024 INIST</idno>
<idno type="RBID">Pascal:89-0058024</idno>
<idno type="wicri:Area/Main/Corpus">026464</idno>
<idno type="wicri:Area/Main/Repository">026502</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0142-2421</idno>
<title level="j" type="abbreviated">Surf. interface anal.</title>
<title level="j" type="main">Surface and interface analysis</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term>
<term>Coatings</term>
<term>Experimental study</term>
<term>Indium Antimonides</term>
<term>Inorganic compound</term>
<term>Reflectance</term>
<term>Semiconductor materials</term>
<term>Silicon Oxides</term>
<term>Visible reflection</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Réflexion visible</term>
<term>Coefficient réflexion</term>
<term>Revêtement</term>
<term>Silicium Oxyde</term>
<term>Composé minéral</term>
<term>Semiconducteur</term>
<term>Indium Antimoniure</term>
<term>Composition chimique</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0142-2421</s0>
</fA01>
<fA03 i2="1"><s0>Surf. interface anal.</s0>
</fA03>
<fA05><s2>11</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Application of reflectance studies to layered samples: SiOx on InSb</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>REMOND (G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HOLLOWAY (P. H.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CAYE (R.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RUZAKOWSKI (P.)</s1>
</fA11>
<fA14 i1="01"><s1>Bureau rech. géologiques minières</s1>
<s2>Orléans 45060</s2>
<s3>FRA</s3>
<sZ>A11011000</sZ>
</fA14>
<fA20><s1>134-143</s1>
</fA20>
<fA21><s1>1988</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>CNRS</s1>
<s2>18260</s2>
</fA43>
<fA44><s0>0000</s0>
</fA44>
<fA45><s0>13 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>89-0058024</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i2="1"><s0>Surface and interface analysis</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC02 i1="01" i2="X"><s0>001B11H01B</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Réflexion visible</s0>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Coefficient réflexion</s0>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Revêtement</s0>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Silicium Oxyde</s0>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Composé minéral</s0>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Semiconducteur</s0>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Indium Antimoniure</s0>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Composition chimique</s0>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Visible reflection</s0>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Reflectance</s0>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Coatings</s0>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Silicon Oxides</s0>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Inorganic compound</s0>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Semiconductor materials</s0>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium Antimonides</s0>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Chemical composition</s0>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estudio experimental</s0>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Reflexión visible</s0>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Coeficiente reflexión</s0>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Revestimiento</s0>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Silicio</s0>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Compuesto inorgánico</s0>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Indio</s0>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Composición química</s0>
</fC03>
<fN21><s1>809</s1>
</fN21>
<fN82><s1>NBS</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
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